silicon-germanium (SiGE)
Bulk crystals of SicGe1-x solid solutions are promising candidates for a veriety of microelectronics and optoelectronics,

SiGe

Bulk crystals of SixGe1-x solid solutions are promising candidates for a variety of microelectronic and optoelectronic. SixGe1-x single crystals for microelectronic and optoelectronic device applications have generally been prepared in the form of thin  films grown on a silicon substrate by various epitaxial growth techniques. Bulk monocrystalline SixGe1-x alloy also has expected application as a photo-detector, a thermo-generator, an x-ray and neutron monochromator, etc.In order to achieve high quality SixGe1-x crystals with different germanium contents, a variety of melt crystal growth techniques, such as Czochralski, Bridgman are used.

 

SixGe1-x

  Czochralski and Bridgman crystal growth technology

 

Brand

Grade

Diameter, mm

Orientation

Type

Crystalline form

SGE

Electronic

50-70; 70-100; 200-250

[111], [100], [110]

N / P

Monocrystalline

SGS

Solar

50-70; 70-100; 200-250

[100]

N / P

Monocrystalline

SGT

Thermoelectric

50-70; 70-100

[111], [100]

N / P

Monocrystalline / Polycrystalline

SGO

Optical

50-70; 70-100; 200-250

100]

N / P

Monocrystalline / Polycrystalline

SGD

Detector

50-70; 70-110

.

N / P

Monocrystalline / Polycrystalline

SGP

Special

40 - 300

.

N / P

Monocrystalline / Polycrystalline

 

SixGe1-x

 

Bulk crystals of SixGe1-x solid solutions are promising candidates for a variety of microelectronic and optoelectronic

device applications such as:

 

   - Based on Si/SiGe heterojunction bipolar transistors (HBT),

   - High electron mobility field effect transistors,

   - Photo detectors,

   - Solar cells,

   - Thermoelectric power generators,

   - Tunable neutron and x-ray monochromators,

   - High speed temperature sensors and γ-ray detectors.

 

 SixGe1-x single crystals for microelectronic and optoelectronic device applications have generally been prepared

 in the form of thin  films grown on a silicon substrate by various epitaxial growth techniques such as:

 

   - Molecular Beam Epitaxy (MBE),

   - Rapid Thermal Chemical Vapor Deposition (RTCVD),

   - Chemical Vapor Deposition (CVD),

   - Ultra High Vacuum Chemical Vapor Deposition (UHV/CVD).

 

Bulk monocrystalline SixGe1-x alloy also has expected application as a photo-detector, a thermo-generator,

an x-ray and neutron monochromator, etc.

In order to achieve high quality SixGe1-x crystals with different germanium contents, a variety of melt crystal growth

techniques, such as Czochralski, Bridgman are used.